Semiconductor Module New Functionality in Version 5.2a Enhanced Performance for the Ideal Schottky Boundary Condition at Metal Contacts In version 5.2 and prior, a constant extrapolation scheme is used at metal contacts for the ideal Schottky boundary condition. This requires a very refined mesh at the boundary to produce results with acceptable accuracy. In version 5.2a, a high-order extrapolation scheme has been added to achieve much better accuracy without the need for an extremely dense mesh at the boundary. Improved Performance for the Thermionic Emission Boundary Condition at Heterojunctions In version 5.2 and prior, a constant extrapolation scheme is used at heterojunctions for the Thermionic Emission boundary condition. This requires a very refined mesh at the boundary to produce results with acceptable accuracy. In version 5.2a, a high-order extrapolation scheme has been added to achieve much better accuracy without the need for an extremely dense mesh at the boundary. Enhanced Capability for the Continuous Quasi Fermi Level Boundary Condition at Heterojunctions Fermi-Dirac statistics are now supported for heterojunctions with continuous quasi-Fermi-level boundary conditions. More Accurate Formulation for Electrostatics of Adjacent Charge Conservation Domains The electrostatics formulation for adjacent charge conservation domains is improved to obtain more accurate results. Optimized Study Settings to Speed Up Computation for the Bipolar Transistor Models The Study settings for the bipolar transistor tutorial models have been optimized to speed up computation. In version 5.2a, the 3D model takes hours rather than days. The 2D model takes minutes rather than over an hour.